BXP3N1KF - THT N channel transistors

BXP3N1KF
Description

Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1kV
Drain current 1.6A
Pulsed drain current 12A
Power dissipation 25W
Case TO220F
Gate-source voltage ±30V
On-state resistance
Mounting THT
Gate charge 18nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat