BXP13N50P - THT N channel transistors

BXP13N50P
Description

Транзистор: N-MOSFET; польовий; 500В; 13А; Idm: 52А; 158Вт; TO220

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 13A
Pulsed drain current 52A
Power dissipation 158W
Case TO220
Gate-source voltage ±30V
On-state resistance 0.46Ω
Mounting THT
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat