BXP13N50F - THT N channel transistors

BXP13N50F
Description

Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 8.1A
Pulsed drain current 52A
Power dissipation 51W
Case TO220F
Gate-source voltage ±30V
On-state resistance 0.46Ω
Mounting THT
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat