BXP12N65F - THT N channel transistors

BXP12N65F
Description

Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 7.7A
Pulsed drain current 48A
Power dissipation 51W
Case TO220F
Gate-source voltage ±30V
On-state resistance 0.8Ω
Mounting THT
Gate charge 39nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat