BUK9Y19-75B.115 - SMD N channel transistors

BUK9Y19-75B.115
Description

Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 75V
Drain current 34.1A
Pulsed drain current 192A
Power dissipation 106W
Case LFPAK56
PowerSO8
SOT669
Gate-source voltage ±15V
On-state resistance 48mΩ
Mounting SMD
Gate charge 30nC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat