BUK6D120-60PX - SMD P channel transistors

BUK6D120-60PX
Description

Транзистор: P-MOSFET; Trench; польовий; -60В; -5,1А; Idm: -32А; 15Вт

Specifications
Manufacturer NEXPERIA
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -60V
Drain current -5.1A
Pulsed drain current -32A
Power dissipation 15W
Case DFN2020MD-6
SOT1220
On-state resistance 256mΩ
Mounting SMD
Gate charge 18nC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat