BSZ900N20NS3GATMA1 - SMD N channel transistors

BSZ900N20NS3GATMA1
Description

Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 200V
Drain current 15.2A
Power dissipation 62.5W
Case PG-TSDSON-8
Gate-source voltage ±20V
On-state resistance 90mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat