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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / BSS84AHZGT116

BSS84AHZGT116 - SMD P channel transistors

BSS84AHZGT116
Description

Transistor: P-MOSFET; Trench; unipolar; -60V; -230mA; Idm: -0.92A

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -60V
Drain current -230mA
Pulsed drain current -0.92A
Power dissipation 0.35W
Case SOT23
Gate-source voltage ±20V
On-state resistance 6.4Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat