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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BSS806NEH6327XTSA1

BSS806NEH6327XTSA1 - SMD N channel transistors

BSS806NEH6327XTSA1
Description

Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 2
Polarisation unipolar
Drain-source voltage 20V
Drain current 2.3A
Power dissipation 0.5W
Case SOT23
Gate-source voltage ±8V
On-state resistance 82mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat