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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / BSS308PEH6327XTSA1

BSS308PEH6327XTSA1 - SMD P channel transistors

BSS308PEH6327XTSA1
Description

Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology OptiMOS™ P3
Polarisation unipolar
Drain-source voltage -30V
Drain current -2A
Power dissipation 0.5W
Case PG-SOT23
Gate-source voltage ±20V
On-state resistance 80mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat