BSS123Q-13 - SMD N channel transistors

BSS123Q-13
Description

Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 0.17A
Pulsed drain current 0.68A
Power dissipation 0.3W
Case SOT23
Gate-source voltage ±20V
On-state resistance
Mounting SMD
Kind of package 13 inch reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat