BSS123NH6327XTSA1 - SMD N channel transistors

BSS123NH6327XTSA1
Description

Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™
Polarisation unipolar
Drain-source voltage 100V
Drain current 0.15A
Pulsed drain current 0.77A
Power dissipation 0.5W
Case SOT23
Gate-source voltage ±20V
On-state resistance 10Ω
Mounting SMD
Gate charge 0.6nC
Kind of channel enhancement
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Development and design: Seventh Cat