BSS123LT1G - SMD N channel transistors

BSS123LT1G
Description

Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 0.17A
Power dissipation 0.225W
Case SOT23
Gate-source voltage ±20V
On-state resistance
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat