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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BSS123-YAN

BSS123-YAN - SMD N channel transistors

BSS123-YAN
Description

Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A

Specifications
Manufacturer YANGJIE TECHNOLOGY
Type of transistor N-MOSFET
Technology TRENCH POWER MV
Polarisation unipolar
Drain-source voltage 100V
Drain current 0.16A
Pulsed drain current 0.8A
Power dissipation 0.35W
Case SOT23
Gate-source voltage ±20V
On-state resistance 5.5Ω
Mounting SMD
Gate charge 2.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat