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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BSS123-R1

BSS123-R1 - SMD N channel transistors

BSS123-R1
Description

Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW

Specifications
Manufacturer PanJit Semiconductor
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 0.17A
Pulsed drain current 0.68A
Power dissipation 0.5W
Case SOT23
Gate-source voltage ±20V
On-state resistance 10Ω
Mounting SMD
Gate charge 1.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat