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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / BSP316PH6327XTSA1

BSP316PH6327XTSA1 - SMD P channel transistors

BSP316PH6327XTSA1
Description

Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage -100V
Drain current -0.68A
Power dissipation 1.8W
Case PG-SOT223
Gate-source voltage ±20V
On-state resistance 1.8Ω
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat