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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BSP297H6327XTSA1

BSP297H6327XTSA1 - SMD N channel transistors

BSP297H6327XTSA1
Description

Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage 200V
Drain current 0.66A
Power dissipation 1.8W
Case SOT223
Gate-source voltage ±20V
On-state resistance 1.8Ω
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat