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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BSP149H6327XTSA1

BSP149H6327XTSA1 - SMD N channel transistors

BSP149H6327XTSA1
Description

Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage 200V
Drain current 0.53A
Pulsed drain current 2.6A
Power dissipation 1.8W
Case SOT223
Gate-source voltage ±20V
On-state resistance 3.5Ω
Mounting SMD
Kind of channel depletion
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Development and design: Seventh Cat