Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / BSO613SPVGXUMA1

BSO613SPVGXUMA1 - SMD P channel transistors

BSO613SPVGXUMA1
Description

Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage -60V
Drain current -3.44A
Pulsed drain current -13.8A
Power dissipation 2.5W
Case SO8
Gate-source voltage ±20V
On-state resistance 0.13Ω
Mounting SMD
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat