BSN20BKR - SMD N channel transistors

BSN20BKR
Description

Транзистор: N-MOSFET; польовий; 60В; 0,17А; 402мВт; SOT23,TO236AB

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.17A
Power dissipation 402mW
Case SOT23
TO236AB
Gate-source voltage ±20V
On-state resistance 5.7Ω
Mounting SMD
Gate charge 0.49nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat