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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / BSL308PEH6327XTSA1

BSL308PEH6327XTSA1 - Multi channel transistors

BSL308PEH6327XTSA1
Description

Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET x2
Technology OptiMOS™ P3
Polarisation unipolar
Drain-source voltage -30V
Drain current -2A
Power dissipation 0.5W
Case PG-TSOP-6
Gate-source voltage ±20V
On-state resistance 80mΩ
Mounting SMD
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat