BSH203.215 - SMD P channel transistors

BSH203.215
Description

Transistor: P-MOSFET; unipolar; -30V; -0.3A; 170mW; SOT23,TO236AB

Specifications
Manufacturer NEXPERIA
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -0.3A
Power dissipation 0.17W
Case SOT23
TO236AB
Gate-source voltage ±8V
On-state resistance 1.65Ω
Mounting SMD
Gate charge 2.2nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat