BSH111BKR - SMD N channel transistors

BSH111BKR
Description

Transistor: N-MOSFET; unipolar; 55V; 0.13A; 364mW; SOT23,TO236AB

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 55V
Drain current 0.13A
Power dissipation 364mW
Case SOT23
TO236AB
Gate-source voltage ±10V
On-state resistance 8.1Ω
Mounting SMD
Gate charge 0.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat