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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BSC123N08NS3GATMA1

BSC123N08NS3GATMA1 - SMD N channel transistors

BSC123N08NS3GATMA1
Description

Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 80V
Drain current 55A
Power dissipation 66W
Case PG-TDSON-8
Gate-source voltage ±20V
On-state resistance 12.3mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat