BSC100N06LS3GATMA1 - SMD N channel transistors

BSC100N06LS3GATMA1
Description

Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 60V
Drain current 36A
Pulsed drain current 200A
Power dissipation 50W
Case PG-TDSON-8
Gate-source voltage ±20V
On-state resistance 10mΩ
Mounting SMD
Gate charge 45nC
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat