Added to cart
View cart
Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
| Manufacturer |
BASiC SEMICONDUCTOR |
| Type of transistor |
IGBT |
| Technology |
Field Stop SiC SBD Trench |
| Collector-emitter voltage |
650V |
| Collector current |
75A |
| Power dissipation |
405W |
| Case |
TO247-4 |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
300A |
| Mounting |
THT |
| Gate charge |
444nC |
| Kind of package |
tube |
| Turn-on time |
84ns |
| Turn-off time |
565ns |
| Features of semiconductor devices |
integrated anti-parallel diode |