BGH75N120HF1 - THT IGBT transistors

BGH75N120HF1
Description

Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3

Specifications
Manufacturer BASiC SEMICONDUCTOR
Type of transistor IGBT
Technology Field Stop
SiC SBD
Trench
Collector-emitter voltage 1.2kV
Collector current 75A
Power dissipation 568W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 200A
Mounting THT
Gate charge 398nC
Kind of package tube
Turn-on time 140ns
Turn-off time 443ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat