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Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
| Manufacturer |
BASiC SEMICONDUCTOR |
| Type of transistor |
IGBT |
| Technology |
Field Stop SiC SBD Trench |
| Collector-emitter voltage |
650V |
| Collector current |
50A |
| Power dissipation |
357W |
| Case |
TO247-3 |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
200A |
| Mounting |
THT |
| Gate charge |
308nC |
| Kind of package |
tube |
| Turn-on time |
54ns |
| Turn-off time |
256ns |
| Features of semiconductor devices |
integrated anti-parallel diode |