B2M065120R - SMD N channel transistors

B2M065120R
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W

Specifications
Manufacturer BASiC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 24A
Pulsed drain current 85A
Power dissipation 150W
Case TO263-7
Gate-source voltage -4...18V
On-state resistance 65mΩ
Mounting SMD
Gate charge 60nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
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Development and design: Seventh Cat