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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / B2M065120H

B2M065120H - THT N channel transistors

B2M065120H
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W

Specifications
Manufacturer BASiC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 33A
Pulsed drain current 85A
Power dissipation 250W
Case TO247-3
Gate-source voltage -4...18V
On-state resistance 65mΩ
Mounting THT
Gate charge 60nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat