B2D20120H1 - THT Schottky diodes

B2D20120H1
Description

Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA

Specifications
Manufacturer BASiC SEMICONDUCTOR
Type of diode Schottky rectifying
Technology SiC
Mounting THT
Max. off-state voltage 1.2kV
Load current 20A
Semiconductor structure single diode
Case TO247-2
Max. forward voltage 1.78V
Max. forward impulse current 190A
Leakage current 40µA
Power dissipation 159W
Kind of package tube
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Development and design: Seventh Cat