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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
| Manufacturer |
BASiC SEMICONDUCTOR |
| Type of transistor |
N-MOSFET |
| Technology |
SiC |
| Polarisation |
unipolar |
| Drain-source voltage |
1.2kV |
| Drain current |
27A |
| Pulsed drain current |
80A |
| Power dissipation |
241W |
| Case |
TO247-4 |
| Gate-source voltage |
-5...20V |
| On-state resistance |
80mΩ |
| Mounting |
THT |
| Gate charge |
149nC |
| Kind of package |
tube |
| Kind of channel |
enhancement |
| Features of semiconductor devices |
Kelvin terminal |