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Home / Catalog / TME catalog / Semiconductors / Integrated circuits / Memories - integrated circuits / SRAM memories - integrated circuits / Parallel SRAM memories - integ. circ. / AS7C31026B-10JIN

AS7C31026B-10JIN - Parallel SRAM memories - integ. circ.

AS7C31026B-10JIN
Description

IC: SRAM memory; 1MbSRAM; 16kx8bit; 3.3V; 10ns; SOJ44; 400mils

Specifications
Manufacturer ALLIANCE MEMORY
Type of integrated circuit SRAM memory
Kind of memory asynchronous
SRAM
Memory 1Mb SRAM
Memory organisation 16kx8bit
Operating voltage 3.3V
Access time 10ns
Case SOJ44
Mounting SMD
Integrated circuit features fast
IC width 400mils
Operating temperature -40...85°C
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