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Home / Catalog / TME catalog / Semiconductors / Integrated circuits / Memories - integrated circuits / DRAM memories - integrated circuits / AS4C1M16S-6TCN

AS4C1M16S-6TCN - DRAM memories - integrated circuits

AS4C1M16S-6TCN
Description

IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II

Specifications
Manufacturer ALLIANCE MEMORY
Type of integrated circuit DRAM memory
Kind of memory SDRAM
Memory 16Mb DRAM
Memory organisation 1Mx16bit
Operating voltage 3.3V
Clock frequency 166MHz
Access time 5.4ns
Case TSOP50 II
Mounting SMD
Operating temperature 0...70°C
Kind of interface parallel
Kind of package in-tray
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Development and design: Seventh Cat