AOY2610E - THT N channel transistors

AOY2610E
Description

Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251; ESD

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 36.5A
Power dissipation 23.5W
Case TO251
Gate-source voltage ±20V
On-state resistance 9.5mΩ
Mounting THT
Gate charge 14.5nC
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat