AOTF5B65M1 - THT IGBT transistors

AOTF5B65M1
Description

Transistor: IGBT; 650V; 5A; 10W; TO220F; Eoff: 0.12mJ; Eon: 0.09mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 5A
Power dissipation 10W
Case TO220F
Gate-emitter voltage ±30V
Pulsed collector current 15A
Mounting THT
Gate charge 14nC
Kind of package tube
Turn-on time 21ns
Turn-off time 157ns
Collector-emitter saturation voltage 1.87V
Turn-off switching energy 0.12mJ
Turn-on switching energy 0.09mJ
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat