AOTF20B65M1 - THT IGBT transistors

AOTF20B65M1
Description

Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.27mJ; Eon: 0.47mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 20A
Power dissipation 18W
Case TO220F
Gate-emitter voltage ±30V
Pulsed collector current 60A
Mounting THT
Gate charge 46nC
Kind of package tube
Turn-on time 51ns
Turn-off time 166ns
Collector-emitter saturation voltage 1.7V
Turn-off switching energy 0.27mJ
Turn-on switching energy 0.47mJ
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Development and design: Seventh Cat