AOTF10B60D2 - THT IGBT transistors

AOTF10B60D2
Description

Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 10A
Power dissipation 12W
Case TO220F
Gate-emitter voltage ±20V
Pulsed collector current 20A
Mounting THT
Gate charge 9.4nC
Kind of package tube
Turn-on time 26ns
Turn-off time 124ns
Collector-emitter saturation voltage 1.55V
Turn-off switching energy 0.04mJ
Turn-on switching energy 0.14mJ
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Development and design: Seventh Cat