AOT3N100 - THT N channel transistors

AOT3N100
Description

Transistor: N-MOSFET; unipolar; 1kV; 1.8A; 132W; TO220

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1kV
Drain current 1.8A
Power dissipation 132W
Case TO220
Gate-source voltage ±30V
On-state resistance
Mounting THT
Gate charge 15nC
Kind of channel enhancement
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Development and design: Seventh Cat