AOT10B60D - THT IGBT transistors

AOT10B60D
Description

Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 10A
Power dissipation 82W
Case TO220
Gate-emitter voltage ±20V
Pulsed collector current 40A
Mounting THT
Gate charge 17.4nC
Kind of package tube
Turn-on time 25ns
Turn-off time 80.8ns
Collector-emitter saturation voltage 1.53V
Turn-off switching energy 0.07mJ
Turn-on switching energy 0.26mJ
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat