AOSD62666E - Multi channel transistors

AOSD62666E
Description

Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8; ESD

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 60V
Drain current 7.5A
Power dissipation 1.6W
Case SO8
Gate-source voltage ±20V
On-state resistance 14.5mΩ
Mounting SMD
Gate charge 6.5nC
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat