AOM065V120X2 - THT N channel transistors

AOM065V120X2
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 29.6A
Pulsed drain current 85A
Power dissipation 187.5W
Case TO247-4
Gate-source voltage -5...15V
On-state resistance 90mΩ
Mounting THT
Gate charge 62.3nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
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Development and design: Seventh Cat