AOK50B65H1 - THT IGBT transistors

AOK50B65H1
Description

Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 50A
Power dissipation 188W
Case TO247
Gate-emitter voltage ±30V
Pulsed collector current 150A
Mounting THT
Gate charge 76nC
Kind of package tube
Turn-on time 111ns
Turn-off time 206ns
Collector-emitter saturation voltage 1.9V
Turn-off switching energy 0.85mJ
Turn-on switching energy 1.92mJ
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Development and design: Seventh Cat