AOK20B65M2 - THT IGBT transistors

AOK20B65M2
Description

Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 20A
Power dissipation 114W
Case TO247
Gate-emitter voltage ±30V
Pulsed collector current 60A
Mounting THT
Gate charge 46nC
Kind of package tube
Turn-on time 59ns
Turn-off time 178ns
Collector-emitter saturation voltage 1.7V
Turn-off switching energy 0.28mJ
Turn-on switching energy 0.58mJ
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat