AOD6B60M1 - SMD IGBT transistors

AOD6B60M1
Description

Transistor: IGBT; 600V; 6A; 28W; TO252; Eoff: 0.09mJ; Eon: 0.12mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 6A
Power dissipation 28W
Case TO252
Gate-emitter voltage ±30V
Pulsed collector current 18A
Mounting SMD
Gate charge 14nC
Kind of package reel
tape
Turn-on time 20ns
Turn-off time 158ns
Collector-emitter saturation voltage 1.7V
Turn-off switching energy 0.09mJ
Turn-on switching energy 0.12mJ
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Development and design: Seventh Cat