4435-GFS - SMD P channel transistors

4435-GFS
Description

Transistor: P-MOSFET; Trench; unipolar; -30V; -11A; 2.5W; SOP8

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -30V
Drain current -11A
Power dissipation 2.5W
Case SOP8
Gate-source voltage ±20V
Mounting SMD
Gate charge 40nC
Kind of channel enhancement
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Development and design: Seventh Cat