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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / 3401-GFS

3401-GFS - SMD P channel transistors

3401-GFS
Description

Transistor: P-MOSFET; Trench; unipolar; -30V; -4.2A; 1.2W; SOT23

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -30V
Drain current -4.2A
Power dissipation 1.2W
Case SOT23
Gate-source voltage ±12V
Mounting SMD
Gate charge 8.5nC
Kind of channel enhancement
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Development and design: Seventh Cat