2SJ168 - SMD P channel transistors

2SJ168
Description

Transistor: P-MOSFET; unipolar; -60V; -0.2A; 200mW; SC59

Specifications
Manufacturer TOSHIBA
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -200mA
Power dissipation 0.2W
Case SC59
Gate-source voltage ±20V
On-state resistance
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat