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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / 2N7002P.215

2N7002P.215 - SMD N channel transistors

2N7002P.215
Description

Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.28A
Pulsed drain current 1.2A
Power dissipation 0.42W
Case SOT23
TO236AB
Gate-source voltage ±20V
On-state resistance 2Ω
Mounting SMD
Gate charge 0.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat