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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / 2N7002NXBKR

2N7002NXBKR - SMD N channel transistors

2N7002NXBKR
Description

Transistor: N-MOSFET; Trench; unipolar; 60V; 0.17A; Idm: 0.9A; 0.31W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.17A
Pulsed drain current 0.9A
Power dissipation 0.31W
Case SOT23
TO236AB
Gate-source voltage ±20V
On-state resistance 5.7Ω
Mounting SMD
Gate charge 1nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat